absolute maximum ratings t a =25c unless otherwise noted AO6402A 30v n-channel mosfet product summary v ds (v) = 30v i d = 7.5a (v gs = 10v) r ds(on) < 24m w (v gs = 10v) r ds(on) < 35m w (v gs = 4.5v) general description the AO6402A uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. g d s tsop6 top view bottom view pin1 d d g d s d top view 1 2 3 6 5 4 symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r q jl 54 68 w junction and storage temperature range a p d c 2.0 1.28 -55 to 150 t a =70c continuous drain current a,f maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 7.5 6.0 64 i d c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w alpha & omega semiconductor, ltd. www.aosmd.com
AO6402A symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 17.3 24 t j =125c 25 34 25 35 m w g fs 20 s v sd 0.75 1 v i s 2.5 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 2 2.8 w q g (10v) 7.2 11 nc q g (4.5v) 3.5 5 nc q gs 1.3 nc q gd 1.7 nc t d(on) 4.5 6.5 ns turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =7.5a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance output capacitance m w v gs =4.5v, i d =5.6a i s =1a,v gs =0v v ds =5v, i d =7.5a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate threshold voltage v ds =v gs i d =250 m a v gs =10v, i d =7.5a reverse transfer capacitance static drain-source on-resistance forward transconductance diode forward voltage v gs =0v, v ds =0v, f=1mhz drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current i dss m a gate-body leakage current r ds(on) maximum body-diode continuous current input capacitance alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 4.5 6.5 ns t r 2.7 4.5 ns t d(off) 14.9 23 ns t f 2.9 5.5 ns t rr 10.5 12.6 ns q rr 4.5 5.4 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime body diode reverse recovery time body diode reverse recovery charge i f =7.5a, di/dt=100a/ m s i f =7.5a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =2 w , r gen =3 w turn-off fall time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. rev4: april. 2012 alpha & omega semiconductor, ltd. www.aosmd.com
AO6402A typical electrical and thermal characteristics 67 41 1.2 1.8 11 5 4.5 23 5.5 10.5 12.6 10 15 20 25 30 35 40 45 0 5 10 15 20 r ds(on) (m w ww w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v id=7.5a v gs =4.5v id=5.6a 25 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v alpha & omega semiconductor, ltd. www.aosmd.com 10.5 12.6 4.5 5.4 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 10 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage v gs =10v i d =7.5a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO6402A typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 10 20 30 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss v ds =15v i d =7.5a t j(max) =150 c t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd. www.aosmd.com 0 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =110 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.0 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) alpha & omega semiconductor, ltd. www.aosmd.com
AO6402A - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform diode recovery test circuit & waveforms - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr alpha & omega semiconductor, ltd. www.aosmd.com
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